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NTLJF3117PTAG Datasheet - ON Semiconductor

NTLJF3117P image

Part Name
NTLJF3117PTAG

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8 Pages

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88.3 kB

MFG CO.
ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode

−20 V, −4.1 A, P−Channel, with 2.0 A 
Schottky Barrier Diode, 2x2 mm, μCool Package


FEATUREs
• FETKY Configuration with MOSFET plus Low Vf Schottky Diode
• μCOOL Package Provides Exposed Drain Pad for Excellent
   Thermal Conduction
• 2x2 mm Footprint Same as SC−88 Package Design
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device


APPLICATIONs
• Optimized for Portable Applications like Cell Phones, Digital
   Cameras, Media Players, etc.
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators


Part Name
Description
PDF
MFG CO.
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2004 )
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2016 )
ON Semiconductor
Power MOSFET and Schottky Diode
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor
Power MOSFET and Schottky Diode
ON Semiconductor

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