Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

FEATUREs:
• High DC Current Gain: hFE = 2500 Typ @ IC = 4A
• Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
• Low Collector–Emitter Saturation Voltage:
        VCE(sat) = 2V Max @ IC = 3A
                    = 4V Max @ IC = 5A
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor