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NSR05T40P2 Datasheet - ON Semiconductor

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Part Name
NSR05T40P2

Other PDF
  2015  

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5 Pages

File Size
53.2 kB

MFG CO.
ONSEMI
ON Semiconductor ONSEMI

500 mA, 40 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications.


FEATUREs
• Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA
• Low Reverse Current − 2.0 A (Typ.) @ VR = 40 V
• 500 mA of Continuous Forward Current
• ESD Rating: − Human Body Model: Class 3B
                       − Charged Device Model: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection


Part Name
Description
PDF
MFG CO.
500 mA, 40 V Schottky Barrier Diode
ON Semiconductor
500 mA, 40 V Schottky Barrier Diode ( Rev : 2017 )
ON Semiconductor
500 mA, 40 V Schottky Barrier Diode
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500 mA Schottky Barrier Diode 40 Volts ( Rev : 2020 )
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500 mA, 30 V Schottky Barrier Diode ( Rev : 2016 )
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500 mA, 30 V Schottky Barrier Diode
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Schottky Barrier Diode 500 mA
STANSON TECHNOLOGY
500 mA Schottky Barrier Diode 30 Volts ( Rev : 2011 )
Micro Commercial Components

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