General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 75A, 50V. RDS(ON) = 0.013W @ VGS=10V.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need
   for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through
   hole and surface mount applications.