DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.
FEATURES
• Suitable for short and medium
pulse applications up to
500 µs/10%
• Internal input and output
prematching networks allow an
easier design of circuits
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Intended for use in common base,
class C, broadband, pulsed power
amplifiers for TCAS applications in
the 1030 to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.