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MUR8100E(2008) Datasheet - ON Semiconductor

MUR8100EG image

Part Name
MUR8100E

Other PDF
  2004   lastest PDF  

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6 Pages

File Size
117.2 kB

MFG CO.
ON-Semiconductor
ON Semiconductor ON-Semiconductor

SWITCHMODE Power Rectifiers
Ultrafast “E’’ Series with High Reverse Energy Capability

The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes.


FEATUREs
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
   Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available*

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds


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