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MS3302 Datasheet - Advanced Power Technology

MS3302 image

Part Name
MS3302

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4 Pages

File Size
97.8 kB

MFG CO.
APT
Advanced Power Technology  APT

DESCRIPTION:
The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions.


FEATUREs
· 3.0 GHz
· GOLD METALIZATION
· EMITTER BALLASTED
· POUT = 4.5 W MINIMUM
· GP = 4.5 dB
· ∞:1 VSWR CAPABILITY @ RATED CONDITIONS
· COMMON BASE CONFIGURATION

 

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Part Name
Description
PDF
MFG CO.
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics

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