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MRFG35010R1 Datasheet - Freescale Semiconductor

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Part Name
MRFG35010R1

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MFG CO.
Freescale
Freescale Semiconductor Freescale

3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT

Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability)
     Output Power — 1 Watt
     Power Gain — 10 dB
     Efficiency — 30%
• 10 Watts P1dB @ 3550 MHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.


Part Name
Description
PDF
MFG CO.
Gallium Arsenide pHEMT RF Power Field Effect Transistor
NXP Semiconductors.
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Freescale Semiconductor
Gallium Arsenide PHEMT RF Power Field Effect Transistor ( Rev : 2006 )
Freescale Semiconductor

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