The RF MOSFET Line
RF Power Field Effect Transistor
N- Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 26 volt base station equipment.
• Specified Performance @ Full GSM Band, 921- 960 MHz, 26 Volts
Output Power, P1dB ó 80 Watts (Typ)
Power Gain @ P1dB ó 16 dB (Typ)
Efficiency @ P1dB ó 58% (Typ)
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.