The RF Line NPN Silicon RF Power Transistor
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 100 W (PEP) —
IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR