MFG CO.
M/A-COM Technology Solutions, Inc.
Designed for wideband large signal output and drive stages up to 400 MHz range.
N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance
Output power = 30 W
Minimum gain = 13 dB
Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
Part Name
Description
PDF
MFG CO.
The RF MOSFET Line 30W, to 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 30W, to 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 15W, to 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 15W, to 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 100W, 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 150W, to 150MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 150W, to 150MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.