The RF Line
Microwave Pulse Power Transistor

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc
   Output Power = 150 Watts Peak
   Minimum Gain = 7.8 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.