MJH11017 Datasheet - ON Semiconductor
Part Name
MJH11017
Other PDF
PDF
page
7 Pages
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120.4 kB
MFG CO.
ON Semiconductor
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
FEATUREs
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• Pb−Free Packages are Available*
Part Name
Description
PDF
MFG CO.
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
ON Semiconductor
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS
Motorola => Freescale
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
ON Semiconductor
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 150 WATTS
New Jersey Semiconductor
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 150 WATTS
Motorola => Freescale
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
ON Semiconductor
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS
Boca Semiconductor
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