High Speed, High Gain NPN Power Transister with Intergrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications

The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window.

Main features:
• Low Base Drive Requirement
• High DC Current Gain (30 Typical) @ IC = 400 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode Matched with the Power Transistor
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads