FEATURES
• HIGH DC CURRENT GAIN
   HFE = 1000 Min @ IC = 25A
   HFE = 400 Min 0@ IC = 50A
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC
• MONOLITHIC CONSTRUCTION WITH
   BUILT-IN BASE – EMITTER SHUNT RESISTOR
• JUNCTION TEMPERATURE TO +200°C

APPLICATIONS
   For use as output devices in complementary
      general purpose amplifier applications.