DESCRIPTION
The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
    Class A operation
    Internally matched to 50(ohm) system
    High output power
        P1dB = 32W (TYP.) @ f=2.1 - 2.3 GHz
    High power gain
        GLP = 12 dB (TYP.) @ f=2.1 - 2.3GHz
    High power added efficiency
        P.A.E. = 45 % (TYP.) @ f=2.1 - 2.3GHz
    Low distortion [item -51]
        IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

APPLICATION
    item 01 : 2.1 - 2.3 GHz band power amplifier
    item 51 : 2.1 - 2.3 GHz band digital radio communication