DESCRIPTION
The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Class A operation
Internally matched to 50(ohm) system
• High output power
    P1dB=32W (TYP.) @f=2.1 – 2.3GHz
• High power gain
    GLP=12.0dB (TYP.) @f=2.1 – 2.3GHz
• High power added efficiency
    P.A.E.=45% (TYP.) @f=2.1 – 2.3GHz
• Low distortion [item -51]
    IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION
• item 01 : 2.1 – 2.3 GHz band power amplifier
• item 51 : 2.1 – 2.3 GHz band digital radio communication