DESCRIPTION
The MGF1923, low noise GaAs FET with an N-Channel Schottky gate, is designed for use in S to Ku band amplifiers. The MGF1923 is mounted in the super 12 tape.

FEATURES
● High linear power gain
      GLP = 11dB (Typ.) @ 12GHz
● High output at power 1dB gain compression
      P1dB = 13dBm (Typ.) @ 12GHz

APPLICATION
   S to Ku band amplifiers