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MBT3906DW1T1G(2009) Datasheet - ON Semiconductor

MBT3906DW1T1G image

Part Name
MBT3906DW1T1G

Other PDF
  2005   lastest PDF  

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page
6 Pages

File Size
170.2 kB

MFG CO.
ON-Semiconductor
ON Semiconductor ON-Semiconductor

Dual General Purpose Transistor

The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.


FEATUREs
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant


Part Name
Description
PDF
MFG CO.
GENERAL PURPOSE DUAL TRANSISTOR ( Rev : 2012 )
Unisonic Technologies
GENERAL PURPOSE DUAL TRANSISTOR ( Rev : Old_V )
Unisonic Technologies
GENERAL PURPOSE (DUAL TRANSISTOR)
Unisonic Technologies
Dual General Purpose Transistor
Willas Electronic Corp.
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
ON Semiconductor
Dual General Purpose Transistor
Willas Electronic Corp.

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