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MBRD10200CT Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

MBRD10200CT image

Part Name
MBRD10200CT

Other PDF
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page
1 Pages

File Size
676.9 kB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Features:
1) Low power loss, high efficiency, High surge capacity.
2) For use in low voltage, high frequency inverters,
   Free wheeling, and polarity protection applications.
3) Metal silicon junction. Majority carrier conduction.
4) High current Capability, low forward voltage drop.
5) Guard ring for over voltage protection.


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