MFG CO.
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ON Semiconductor
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Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
• High Current Capability
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• High Surge Capacity
Part Name
Description
PDF
MFG CO.
8.0 Amp SCHOTTKY BARRIER RECTIFIERS
3M
8.0 AMPS. Schottky Barrier Rectifiers
( Rev : V_B07 )
TSC Corporation
8.0 AMPS. Schottky Barrier Rectifiers ( Rev : Old_V )
TSC Corporation
8.0 AMPS. Schottky Barrier Rectifiers
TSC Corporation
8.0 AMP. Schottky Barrier Rectifiers
DIYI Electronic Technology Co., Ltd.
8.0 Amp SCHOTTKY BARRIER RECTIFIERS
First Components International
8.0 AMPS. Schottky Barrier Rectifiers
( Rev : Old_V )
TSC Corporation
8.0 AMPS. Schottky Barrier Rectifiers
Yea Shin Technology Co., Ltd
8.0 AMPS. Schottky Barrier Rectifiers ( Rev : V_D09 )
TSC Corporation
8.0 AMP. Schottky Barrier Rectifiers
Shenzhen Luguang Electronic Technology Co., Ltd