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MAR9264T70FS Datasheet - Dynex Semiconductor

MAQ9264C70CB image

Part Name
MAR9264T70FS

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15 Pages

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241 kB

MFG CO.
Dynex
Dynex Semiconductor Dynex

The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard,1.5µm technology.
The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.


FEATURES
■ 1.5µm CMOS-SOS Technology
■ Latch-up Free
■ Fast Access Time 70ns Typical
■ Single 5V Supply
■ Three State Output
■ Low Standby Current 100µA Typical
■ -55°C to +125°C Operation
■ All Inputs and Outputs Fully TTL or CMOS Compatible
■ Fully Static Operation

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Part Name
Description
PDF
MFG CO.
RADIATION HARD 8192 x 8 BIT MASK-PROGRAMMABLE ROM
Zarlink Semiconductor Inc
RADIATION HARD 4096 x 1 BIT STATIC RAM
Zarlink Semiconductor Inc
Radiation hard 1024x4 Bit Static RAM
Dynex Semiconductor
8192 WORD X 8 BIT CMOS STATIC RAM
Toshiba
8192 WORD X 8 BIT CMOS STATIC RAM
Toshiba
8192-word x 8-bit High Speed CMOS Static RAM
Hitachi -> Renesas Electronics
8192 word x 8-bit High Speed CMOS Static RAM
Sony Semiconductor
8192-word × 8-bit High Speed CMOS Static RAM
Hitachi -> Renesas Electronics
Radiation Hardened 8K x 8 SOS CMOS Static RAM
Intersil
8192 x 8-BIT LINE MEMORY
MITSUBISHI ELECTRIC

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