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M32L1632512A Datasheet - ETC1

M32L1632512A image

Part Name
M32L1632512A

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page
54 Pages

File Size
877.5 kB

MFG CO.
ETC1
ETC1 ETC1

[ESMT]

GENERAL DESCRIPTION
  The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies , programmable burst length, and programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.


FEATURES
  JEDEC standard 3.3V power supply
  LVTTL compatible with multiplexed address
  Dual bank / Pulse RAS
  MRS cycle with address key programs
    - CAS Latency ( 2, 3 )
    - Burst Length ( 1, 2, 4, 8 & full page )
    - Burst Type ( Sequential & Interleave )
  All inputs are sampled at the positive going edge of the system clock
  Burst Read Single-bit Write operation
  DQM 0-3 for byte masking
  Auto & self refresh
  32ms refresh period (2K cycle)
  100 pin QFP

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
256K X 32 Bit X 2 Banks Synchronous Graphic RAM
AMIC Technology
256K X 32 Bit X 2 Banks Synchronous Graphic RAM
AMIC Technology
512K X 32 Bit X 2 Banks Synchronous DRAM
AMIC Technology
256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
Integrated Silicon Solution
Synchronous DRAM 512K x 32 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 512K x 32 Bit x 4 Banks
A-Data Technology
1M x 32 Bit x 4 Banks Synchronous DRAM ( Rev : 2006_02 )
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM ( Rev : 2006 )
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
1M x 32 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.

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