LX401 Datasheet - Polyfet RF Devices
Part Name
LX401
Other PDF
PDF
page
2 Pages
File Size
49.9 kB
MFG CO.
Polyfet RF Devices
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
60.0 Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT
Part Name
Description
PDF
MFG CO.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
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