MFG CO.
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
LED36-SMD3 has a stable ouput power and a lifetime more then 80000 hours.
FEATUREs
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.65 µm
• Optical Ouput Power: typ. 30 µW qCW
• Package: TO-5, with TEC, thermistor, PR and window
Part Name
Description
PDF
MFG CO.
Mid-Infrared Light Emitting Diode ( Rev : 2012 )
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode
Roithner LaserTechnik GmbH