Product Description
The LE28BW168T consists of two memory banks, 2 each 512K x 16 bits sector mode flash EEPROM manufactured with SANYOs proprietary, high performance FlashTechnology. The LE28BW168T writes with a 3.0-volt-only power supply.
FEATURES:
• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
– Simultaneous Read and Write Capability
• Superior Reliability
– Endurance: 10,000 Cycles
– Data Retention: 10 years
• Low Power Consumption
– Active Current, Read: 10 mA (typical)
– Active Current, Read & Write: 30 mA (typical)
– Standby Current: 5µA (typical)
– Auto Low Power Mode Current: 5µA (typical)
• Fast Write Operation
– Bank Erase + Program: 8 sec (typical)
– Block Erase + Program: 500 ms (typical)
– Sector Erase + Program: 30 ms (typical)
• Fixed Erase, Program, Write Times
– Does not change after cycling
• Read Access Time
– 80/90 nsec
• Latched Address and Data
• End of Write Detection
– Toggle Bit
– Data # Polling
• Flash Bank: Two Small Erase Element Sizes
– 1K Words per Sector or 32K Words per Block
– Erase either element before Word Program
• CMOS I/O Compatibility
• Packages Available
– 48-Pin TSOP
• Continuous Hardware and Software Data
Protection (SDP)