LC821 Datasheet - Polyfet RF Devices
Part Name
LC821
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page
2 Pages
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29.7 kB
MFG CO.
Polyfet RF Devices
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Part Name
Description
PDF
MFG CO.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
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