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KM732V599A Datasheet - Samsung

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Part Name
KM732V599A

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15 Pages

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346.2 kB

MFG CO.
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The KM732V599A/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.


FEATURES
• Synchronous Operation.
• 2Stage Pipelined operation with 4Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD = 3.3V-5%/+10% Power Supply
• 5V Tolerant Inputs except I/O Pins
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A

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