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K3569(2004) Datasheet - Toshiba

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Part Name
K3569

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  2006   lastest PDF  

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MFG CO.
Toshiba
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Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 ~ 4.0 V (VDS = 10 V, ID = 1 mA)

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Part Name
Description
PDF
MFG CO.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2005 )
Toshiba

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