datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  NEC => Renesas Technology  >>> K3503 PDF

K3503 Datasheet - NEC => Renesas Technology

2SK3503 image

Part Name
K3503

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
105.7 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.


FEATURES
• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there’s no need to consider a drive current
• Since bias resistance can be omitted, the number of components required can be reduced


Part Name
Description
PDF
MFG CO.
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]