SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Low on-state resistance
RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)
RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)
• Low Ciss: Ciss= 5200 pF TYP.
• Built-in gate protection diode