K2597 Datasheet - NEC => Renesas Technology
Part Name
K2597
Description
Other PDF
no available.
PDF
page
6 Pages
File Size
93.2 kB
MFG CO.
NEC => Renesas Technology
FEATURES
• High output, high gain
PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)
PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
• Low intermodulation distortion
• Covers all base station frequencies such as 800-MHz PDC and GSM
• High-reliability gold electrodes
• Hermetic sealed package
• Internal matching circuit
• Push-pull structure
Part Name
Description
PDF
MFG CO.
RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS
Advanced Power Technology
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