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K2512 Datasheet - NEC => Renesas Technology

2SK2512 image

Part Name
K2512

Other PDF
  no available.

PDF
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page
8 Pages

File Size
71.6 kB

MFG CO.
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Low On-Resistance
   RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)
   RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode


Part Name
Description
PDF
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology

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