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JANTXV2N6849 Datasheet - International Rectifier

2N6849 image

Part Name
JANTXV2N6849

Other PDF
  2001  

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page
7 Pages

File Size
223.2 kB

MFG CO.
IR
International Rectifier IR

REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET ®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.


FEATUREs:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
■ ESD Rating: Class 1C per MIL-STD-750, Method 1020

Page Link's: 1  2  3  4  5  6  7 

Part Name
Description
PDF
MFG CO.
HEXFET Transistors
International Rectifier
HEXFET TRANSISTORS
International Rectifier
HEXFET TRANSISTORS N-CHANNEL
International Rectifier
HEXFET TRANSISTORS N-CHANNEL
International Rectifier
P-CHANNEL HEXFET TRANSISTORS
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HEXFET TRANSISTORS N-CHANNEL HEXDIP
International Rectifier
HEXFET® TRANSISTORS N-CHANNEL
New Jersey Semiconductor
HEXFET® TRANSISTORS N-CHANNEL
International Rectifier
HEXFET® TRANSISTORS 400V, N-CHANNEL
International Rectifier
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
International Rectifier

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