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J550 Datasheet - Renesas Electronics

2SJ550 image

Part Name
J550

Description
Silicon P-Channel MOS FET High Speed Power Switching

Other PDF
  no available.

PDF
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page
9 Pages

File Size
83.6 kB

MFG CO.
Renesas
Renesas Electronics Renesas

Description
High speed power switching


FEATUREs
• Low on-resistance
RDS (on) = 0.075 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.

Page Link's: 1  2  3  4  5  6  7  8  9 

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