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IXTP180N10T Datasheet - Inchange Semiconductor

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Part Name
IXTP180N10T

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2 Pages

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264.6 kB

MFG CO.
Iscsemi
Inchange Semiconductor Iscsemi

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤ 6.4mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

• APPLICATION
• DC/DC Converters
• High Speed Power Switching Applications


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