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IXTH13N110 Datasheet - IXYS CORPORATION

IXTH13N110 image

Part Name
IXTH13N110

Description

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page
2 Pages

File Size
44.8 kB

MFG CO.
IXYS
IXYS CORPORATION IXYS

MegaMOS™ FET
N-Channel Enhancement Mode


FEATUREs
• International standard package JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Fast switching times


APPLICATIONs
• Switch-mode and resonant-mode power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density

Page Link's: 1  2 

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Description
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MFG CO.
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GaAs FET
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GaAs FET ( Rev : 2000 )
Infineon Technologies
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GaAs FET
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FET Transistor
ON Semiconductor

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