HiPerFET™ Power MOSFET (Electrically Isolated Tab)

N-Channel Enhancement Mode Avalanche Rated
Fast Intrinsic Rectifier

FEATUREs
• Silicon Chip on Direct-Copper Bond (DCB) Substrate
• Isolated Mounting Surface
• 2500V~ Electrical Isolation
• Avalanche Rated
• Fast Intrinsic Rectifier
• Low RDS(ON) and QG

Advantages
• Easy to Mount
• Space Savings
• High Power Density

APPLICATIONs
• DC-DC Converters
• Battery Chargers
• Switch-Mode and Resonant-Mode Power Supplies
• DC Choppers
• AC & DC Motor Controls