Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

FEATUREs
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors

APPLICATIONs
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector