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IS62C1024L Datasheet - Integrated Silicon Solution

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Part Name
IS62C1024L

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11 Pages

File Size
62.1 kB

MFG CO.
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSIIS62C1024L is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.


FEATURES
• High-speed access time: 35, 70 ns
• Low active power: 450 mW (typical)
• Low standby power: 150 µW (typical) CMOS standby
• Output Enable (OE) and two Chip Enable (CE1and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
LOW POWER 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K X 8 LOW POWER CMOS STATIC RAM ( Rev : 2002 )
Taiwan Memory Technology
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
128K x 8 LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc

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