Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

FEATUREs
• Short circuit rated - 10µs @125°C, VGE = 10V (5μs @ VGE = 15V)
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (over 5kHz)
   See Fig. 1 for Current vs. Frequency curve