Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR5305)
● Straight Lead (IRFU5305)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free