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IRFP470 Datasheet - IXYS CORPORATION

IRFP470 image

Part Name
IRFP470

Description

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page
2 Pages

File Size
45.5 kB

MFG CO.
IXYS
IXYS CORPORATION IXYS

MegaMOS™FET
N-Channel Enhancement Mode


FEATUREs
● International standard packages
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● High commutating dv/dt rating
● Fast switching times


APPLICATIONs
● Switch-mode and resonant-mode power supplies
● Motor controls
● Uninterruptible Power Supplies (UPS)
● DC choppers

Advantages
● Easy to mount with 1 screw
   (isolated mounting screw hole)
● Space savings
● High power density

Page Link's: 1  2 

Part Name
Description
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MFG CO.
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Sanken Electric co.,ltd.
MOS FET
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GaAs FET
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GaAs FET ( Rev : 2000 )
Infineon Technologies
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GaAs FET
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FET Transistor
ON Semiconductor

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