Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

FEATUREs:
■ Low RDS(on)
■ Avalanche Energy Ratings
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Light Weight