IRF530 Datasheet - Philips Electronics
Part Name
IRF530
Description
Other PDF
no available.
PDF
page
7 Pages
File Size
95.9 kB
MFG CO.
Philips Electronics
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package.
1. ’Trench’technology
2. Low on-state resistance
3. Fast switching
4. Low thermal resistance
Part Name
Description
PDF
MFG CO.
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