IRF3710L Datasheet - International Rectifier
Part Name
IRF3710L
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MFG CO.
International Rectifier
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Part Name
Description
PDF
MFG CO.
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International Rectifier
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