Description
   The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

FEATUREs
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection