• DESCRIPTION
• Provide all benefits of a fast switching SJ MOSFET while offering
   an extremely fast and robust body diode

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤0.31Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation