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IPP60R060C7 Datasheet - Infineon Technologies

IPP60R060C7 image

Part Name
IPP60R060C7

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page
15 Pages

File Size
1.5 MB

MFG CO.
Infineon
Infineon Technologies Infineon

Description
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².


FEATUREs
• Suitable for hard and soft switching (PFC and high performance LLC)
• Increased MOSFET dv/dt ruggedness to 120V/ns
• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
• Best in class RDS(on)/package
• Qualified for industrial grade applications according to JEDEC(J-STD20
   and JESD22)


Benefits
• Increased economies of scale by use in PFC and PWM topologies in the
   application
• Higher dv/dt limit enables faster switching leading to higher efficiency
• Enabling higher system efficiency by lower switching losses
• Increased power density solutions due to smaller packages
• Suitable for applications such as server, telecom and solar
• Higher switching frequencies possible without loss in efficiency due to
   low Eossand Qg


APPLICATIONs
   PFC stages and hard stages (TTF, LLC) for high power/performance
   SMPS e.g. Computing, Server, Telecom, UPS and Solar


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