OptiMOS™3 Power-Transistor

FEATUREs
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification